N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220 Infineon IPP65R310CFDXKSA1

RS Stock No.: 857-6943Brand: InfineonManufacturers Part No.: IPP65R310CFDXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

700 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

310 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

104.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

41 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Height

15.95mm

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 6.00

Each (In a Tube of 500) (ex VAT)

AED 6.30

Each (In a Tube of 500) (inc VAT)

N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220 Infineon IPP65R310CFDXKSA1

AED 6.00

Each (In a Tube of 500) (ex VAT)

AED 6.30

Each (In a Tube of 500) (inc VAT)

N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220 Infineon IPP65R310CFDXKSA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
500 - 2000AED 6.00AED 3,000.00
2500 - 4500AED 5.85AED 2,925.00
5000+AED 5.70AED 2,850.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

700 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

310 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

104.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

41 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Height

15.95mm

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more