N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190P6FKSA1

RS Stock No.: 110-9099Brand: InfineonManufacturers Part No.: IPW60R190P6FKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS P6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

21.1mm

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 14.35

Each (In a Pack of 5) (ex VAT)

AED 15.068

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190P6FKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5AED 71.75
10AED 143.50
15AED 215.25
20AED 287.00
25AED 286.25
30AED 343.50
35AED 400.75
40AED 458.00
45AED 515.25
50AED 530.00
55AED 583.00
60AED 636.00
65AED 689.00
70AED 742.00
75AED 795.00

AED 14.35

Each (In a Pack of 5) (ex VAT)

AED 15.068

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190P6FKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5AED 71.75
10AED 143.50
15AED 215.25
20AED 287.00
25AED 286.25
30AED 343.50
35AED 400.75
40AED 458.00
45AED 515.25
50AED 530.00
55AED 583.00
60AED 636.00
65AED 689.00
70AED 742.00
75AED 795.00

Buy in bulk

quantityUnit pricePer Pack
5 - 20AED 14.35AED 71.75
25 - 45AED 11.45AED 57.25
50 - 120AED 10.60AED 53.00
125 - 245AED 9.90AED 49.50
250+AED 9.20AED 46.00

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS P6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

21.1mm

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more