N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1

RS Stock No.: 906-4384Brand: InfineonManufacturers Part No.: IPW65R190CFDFKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17.5 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

21.1mm

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 7.25

Each (In a Pack of 4) (ex VAT)

AED 7.612

Each (In a Pack of 4) (inc VAT)

N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1
Select packaging type

AED 7.25

Each (In a Pack of 4) (ex VAT)

AED 7.612

Each (In a Pack of 4) (inc VAT)

N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17.5 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

21.1mm

Product details

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more