Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V
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AED 9.00
Each (In a Tube of 50) (ex VAT)
AED 9.45
Each (In a Tube of 50) (inc VAT)
50
AED 9.00
Each (In a Tube of 50) (ex VAT)
AED 9.45
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | AED 9.00 | AED 450.00 |
100 - 200 | AED 7.30 | AED 365.00 |
250 - 450 | AED 6.85 | AED 342.50 |
500 - 950 | AED 6.30 | AED 315.00 |
1000+ | AED 5.95 | AED 297.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V