Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Stock information temporarily unavailable.
Please check again later.
AED 3.75
Each (In a Pack of 10) (ex VAT)
AED 3.938
Each (In a Pack of 10) (inc VAT)
10
AED 3.75
Each (In a Pack of 10) (ex VAT)
AED 3.938
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | AED 3.75 | AED 37.50 |
50 - 90 | AED 2.90 | AED 29.00 |
100 - 240 | AED 2.75 | AED 27.50 |
250 - 490 | AED 2.55 | AED 25.50 |
500+ | AED 2.35 | AED 23.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V