P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBF
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Width
9.65mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
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P.O.A.
Each (In a Pack of 5) (ex VAT)
Standard
5
P.O.A.
Each (In a Pack of 5) (ex VAT)
Standard
5
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Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Width
9.65mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products