N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 Infineon IRFP7530PBF

RS Stock No.: 820-8855PBrand: InfineonManufacturers Part No.: IRFP7530PBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

341 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.87mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.7mm

Product details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 14.60

Each (Supplied in a Tube) (ex VAT)

AED 15.33

Each (Supplied in a Tube) (inc. VAT)

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 Infineon IRFP7530PBF
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 29.20
4AED 58.40
6AED 87.60
8AED 116.80
10AED 146.00
12AED 175.20
14AED 204.40
16AED 233.60
18AED 262.80
20AED 254.00
22AED 279.40
24AED 304.80
26AED 330.20
28AED 355.60
30AED 381.00

AED 14.60

Each (Supplied in a Tube) (ex VAT)

AED 15.33

Each (Supplied in a Tube) (inc. VAT)

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 Infineon IRFP7530PBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 29.20
4AED 58.40
6AED 87.60
8AED 116.80
10AED 146.00
12AED 175.20
14AED 204.40
16AED 233.60
18AED 262.80
20AED 254.00
22AED 279.40
24AED 304.80
26AED 330.20
28AED 355.60
30AED 381.00

Buy in bulk

quantityUnit pricePer Tube
2 - 18AED 14.60AED 29.20
20 - 48AED 12.70AED 25.40
50 - 98AED 11.80AED 23.60
100 - 198AED 10.95AED 21.90
200+AED 10.25AED 20.50

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

341 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.87mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.7mm

Product details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more