N-Channel MOSFET, 305 A, 60 V, 3-Pin TO-220 Infineon IRL60B216

RS Stock No.: 896-7358PBrand: InfineonManufacturers Part No.: IRL60B216
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

305 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Series

StrongIRFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.51mm

Product details

StrongIRFET™ Logic-Level Power MOSFET, Infineon

An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.

Optimal RDS(on) @ VGS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 25.45

Each (Supplied in a Tube) (ex VAT)

AED 26.722

Each (Supplied in a Tube) (inc. VAT)

N-Channel MOSFET, 305 A, 60 V, 3-Pin TO-220 Infineon IRL60B216
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5AED 127.25
10AED 254.50
15AED 381.75
20AED 509.00
25AED 636.25
30AED 763.50
35AED 890.75
40AED 1,018.00
45AED 1,145.25
50AED 1,272.50
55AED 1,399.75
60AED 1,527.00
65AED 1,654.25
70AED 1,781.50
75AED 1,908.75

AED 25.45

Each (Supplied in a Tube) (ex VAT)

AED 26.722

Each (Supplied in a Tube) (inc. VAT)

N-Channel MOSFET, 305 A, 60 V, 3-Pin TO-220 Infineon IRL60B216
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5AED 127.25
10AED 254.50
15AED 381.75
20AED 509.00
25AED 636.25
30AED 763.50
35AED 890.75
40AED 1,018.00
45AED 1,145.25
50AED 1,272.50
55AED 1,399.75
60AED 1,527.00
65AED 1,654.25
70AED 1,781.50
75AED 1,908.75

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

305 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Series

StrongIRFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.51mm

Product details

StrongIRFET™ Logic-Level Power MOSFET, Infineon

An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.

Optimal RDS(on) @ VGS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more