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P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 Infineon SI4435DYTRPBF

RS Stock No.: 170-2264Brand: InfineonManufacturers Part No.: SI4435DYTRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

Si4435DYPbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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AED 1.30

Each (On a Reel of 4000) (ex VAT)

AED 1.365

Each (On a Reel of 4000) (inc. VAT)

P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 Infineon SI4435DYTRPBF

4000

Available in multiples of 4000
4000AED 5,200.00
8000AED 10,400.00
12000AED 15,600.00
16000AED 20,800.00
20000AED 26,000.00
24000AED 31,200.00
28000AED 36,400.00
32000AED 41,600.00
36000AED 46,800.00
40000AED 52,000.00
44000AED 57,200.00
48000AED 62,400.00
52000AED 67,600.00
56000AED 72,800.00
60000AED 78,000.00

AED 1.30

Each (On a Reel of 4000) (ex VAT)

AED 1.365

Each (On a Reel of 4000) (inc. VAT)

P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 Infineon SI4435DYTRPBF
Stock information temporarily unavailable.

4000

Available in multiples of 4000
4000AED 5,200.00
8000AED 10,400.00
12000AED 15,600.00
16000AED 20,800.00
20000AED 26,000.00
24000AED 31,200.00
28000AED 36,400.00
32000AED 41,600.00
36000AED 46,800.00
40000AED 52,000.00
44000AED 57,200.00
48000AED 62,400.00
52000AED 67,600.00
56000AED 72,800.00
60000AED 78,000.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

Si4435DYPbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more