Infineon CoolMOS™ C3 N-Channel MOSFET, 2 A, 800 V, 3-Pin TO-220 SPA02N80C3XKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ C3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.85mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 42.52
AED 4.252 Each (In a Pack of 10) (ex VAT)
AED 44.65
AED 4.465 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 42.52
AED 4.252 Each (In a Pack of 10) (ex VAT)
AED 44.65
AED 4.465 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | AED 4.252 | AED 42.52 |
| 100 - 240 | AED 4.042 | AED 40.42 |
| 250 - 490 | AED 3.885 | AED 38.85 |
| 500 - 990 | AED 3.675 | AED 36.75 |
| 1000+ | AED 3.412 | AED 34.12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ C3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.85mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products