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N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220 FP Infineon SPA11N65C3XKSA1

RS Stock No.: 110-7780Brand: InfineonManufacturers Part No.: SPA11N65C3XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

4.85mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.15mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 5.65

Each (In a Pack of 5) (ex VAT)

AED 5.932

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220 FP Infineon SPA11N65C3XKSA1
Select packaging type

AED 5.65

Each (In a Pack of 5) (ex VAT)

AED 5.932

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220 FP Infineon SPA11N65C3XKSA1
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

4.85mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.15mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more