Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
100 V
Series
SIPMOS®
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
37 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.36mm
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.35V
Country of Origin
Malaysia
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 295.00
AED 5.90 Each (In a Tube of 50) (ex VAT)
AED 309.75
AED 6.195 Each (In a Tube of 50) (inc. VAT)
50
AED 295.00
AED 5.90 Each (In a Tube of 50) (ex VAT)
AED 309.75
AED 6.195 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | AED 5.90 | AED 295.00 |
250 - 950 | AED 5.00 | AED 250.00 |
1000 - 2450 | AED 4.50 | AED 225.00 |
2500+ | AED 3.95 | AED 197.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
100 V
Series
SIPMOS®
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
37 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.36mm
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.35V
Country of Origin
Malaysia
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.