Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

RS Stock No.: 823-5560Brand: InfineonManufacturers Part No.: SPP15P10PLHXKSA1Distrelec Article No.: 30341447
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

AED 48.30

AED 9.66 Each (In a Pack of 5) (ex VAT)

AED 50.72

AED 10.143 Each (In a Pack of 5) (inc. VAT)

Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5AED 48.30
10AED 96.60
15AED 144.90
20AED 193.20
25AED 241.50
30AED 289.80
35AED 338.10
40AED 386.40
45AED 434.70
50AED 433.12
55AED 476.44
60AED 519.75
65AED 563.06
70AED 606.38
75AED 649.69

AED 48.30

AED 9.66 Each (In a Pack of 5) (ex VAT)

AED 50.72

AED 10.143 Each (In a Pack of 5) (inc. VAT)

Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5AED 48.30
10AED 96.60
15AED 144.90
20AED 193.20
25AED 241.50
30AED 289.80
35AED 338.10
40AED 386.40
45AED 434.70
50AED 433.12
55AED 476.44
60AED 519.75
65AED 563.06
70AED 606.38
75AED 649.69

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 45AED 9.66AED 48.30
50 - 120AED 8.662AED 43.31
125 - 245AED 8.085AED 40.42
250 - 495AED 7.508AED 37.54
500+AED 7.035AED 35.18

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more