Infineon CoolMOS™ C3 N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
415 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
252 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Height
20.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
AED 66.36
AED 66.36 Each (ex VAT)
AED 69.68
AED 69.68 Each (inc. VAT)
Standard
1
AED 66.36
AED 66.36 Each (ex VAT)
AED 69.68
AED 69.68 Each (inc. VAT)
Standard
1
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quantity | Unit price |
---|---|
1 - 4 | AED 66.36 |
5 - 9 | AED 63.05 |
10 - 24 | AED 60.43 |
25 - 49 | AED 57.70 |
50+ | AED 53.76 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
415 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
252 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Height
20.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.