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N-Channel MOSFET Transistor, 195 A, 295 A, 60 V, 3-Pin TO-220AB International Rectifier IRFB7530PBF

RS Stock No.: 807-1536Brand: International RectifierManufacturers Part No.: IRFB7530PBF
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

195 A, 295 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

294 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

274 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Minimum Operating Temperature

-55 °C

Height

16.51mm

Country of Origin

Mexico

Product details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET Transistor, 195 A, 295 A, 60 V, 3-Pin TO-220AB International Rectifier IRFB7530PBF

P.O.A.

N-Channel MOSFET Transistor, 195 A, 295 A, 60 V, 3-Pin TO-220AB International Rectifier IRFB7530PBF
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

195 A, 295 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

294 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

274 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Minimum Operating Temperature

-55 °C

Height

16.51mm

Country of Origin

Mexico

Product details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in