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IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2

RS Stock No.: 146-4398Brand: IXYSManufacturers Part No.: IXFN150N65X2Distrelec Article No.: 30253364
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

650 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

25.07mm

Length

38.23mm

Typical Gate Charge @ Vgs

335 @ 10 V nC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm

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Stock information temporarily unavailable.

AED 225.54

AED 225.54 Each (ex VAT)

AED 236.82

AED 236.82 Each (inc. VAT)

IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2

1

Available in multiples of 1
1AED 225.54
2AED 451.08
3AED 676.62
4AED 902.16
5AED 1,127.70
6AED 1,353.24
7AED 1,578.78
8AED 1,804.32
9AED 2,029.86
10AED 2,255.40
11AED 2,480.94
12AED 2,706.48
13AED 2,932.02
14AED 3,157.56
15AED 3,383.10

AED 225.54

AED 225.54 Each (ex VAT)

AED 236.82

AED 236.82 Each (inc. VAT)

IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2
Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 225.54
2AED 451.08
3AED 676.62
4AED 902.16
5AED 1,127.70
6AED 1,353.24
7AED 1,578.78
8AED 1,804.32
9AED 2,029.86
10AED 2,255.40
11AED 2,480.94
12AED 2,706.48
13AED 2,932.02
14AED 3,157.56
15AED 3,383.10

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

650 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

25.07mm

Length

38.23mm

Typical Gate Charge @ Vgs

335 @ 10 V nC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more