IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Length
16.26mm
Width
5.3mm
Height
21.46mm
Dimensions
16.26 x 5.3 x 21.46mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 78.90
AED 78.90 Each (ex VAT)
AED 82.84
AED 82.84 Each (inc. VAT)
1
AED 78.90
AED 78.90 Each (ex VAT)
AED 82.84
AED 82.84 Each (inc. VAT)
1
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| quantity | Unit price |
|---|---|
| 1 - 4 | AED 78.90 |
| 5 - 19 | AED 67.93 |
| 20 - 49 | AED 64.99 |
| 50 - 99 | AED 58.81 |
| 100+ | AED 57.32 |
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Length
16.26mm
Width
5.3mm
Height
21.46mm
Dimensions
16.26 x 5.3 x 21.46mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products