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IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 168-4412Brand: IXYSManufacturers Part No.: IXGH30N120B3D1
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 1,323.00

AED 44.10 Each (In a Tube of 30) (ex VAT)

AED 1,389.15

AED 46.305 Each (In a Tube of 30) (inc. VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

30

Available in multiples of 30
30AED 1,323.00
60AED 2,646.00
90AED 3,969.00
120AED 5,292.00
150AED 6,615.00
180AED 7,938.00
210AED 9,261.00
240AED 10,584.00
270AED 11,907.00
300AED 13,230.00
330AED 14,553.00
360AED 15,876.00
390AED 17,199.00
420AED 18,522.00
450AED 19,845.00

AED 1,323.00

AED 44.10 Each (In a Tube of 30) (ex VAT)

AED 1,389.15

AED 46.305 Each (In a Tube of 30) (inc. VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

30

Available in multiples of 30
30AED 1,323.00
60AED 2,646.00
90AED 3,969.00
120AED 5,292.00
150AED 6,615.00
180AED 7,938.00
210AED 9,261.00
240AED 10,584.00
270AED 11,907.00
300AED 13,230.00
330AED 14,553.00
360AED 15,876.00
390AED 17,199.00
420AED 18,522.00
450AED 19,845.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more