IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

RS Stock No.: 194-394Brand: IXYSManufacturers Part No.: MID200-12A4
brand-logo
View all in IGBTs

Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

110 x 62 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
View all in IGBTs

Stock information temporarily unavailable.

AED 645.10

AED 645.10 Each (ex VAT)

AED 677.36

AED 677.36 Each (inc. VAT)

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

1

Available in multiples of 1
1AED 645.10
2AED 1,290.21
3AED 1,935.31
4AED 2,580.41
5AED 3,225.52
6AED 3,870.62
7AED 4,515.72
8AED 5,160.82
9AED 5,805.93
10AED 6,451.03
11AED 7,096.13
12AED 7,741.24
13AED 8,386.34
14AED 9,031.44
15AED 9,676.54

AED 645.10

AED 645.10 Each (ex VAT)

AED 677.36

AED 677.36 Each (inc. VAT)

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 645.10
2AED 1,290.21
3AED 1,935.31
4AED 2,580.41
5AED 3,225.52
6AED 3,870.62
7AED 4,515.72
8AED 5,160.82
9AED 5,805.93
10AED 6,451.03
11AED 7,096.13
12AED 7,741.24
13AED 8,386.34
14AED 9,031.44
15AED 9,676.54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

110 x 62 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more