Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 586.15
Each (In a Box of 2) (ex VAT)
AED 615.458
Each (In a Box of 2) (inc. VAT)
2
AED 586.15
Each (In a Box of 2) (ex VAT)
AED 615.458
Each (In a Box of 2) (inc. VAT)
2
Buy in bulk
quantity | Unit price | Per Box |
---|---|---|
2 - 8 | AED 586.15 | AED 1,172.30 |
10 - 18 | AED 570.95 | AED 1,141.90 |
20+ | AED 556.85 | AED 1,113.70 |
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.