Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
72 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
E 2
Configuration
Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
12
Transistor Configuration
Full Bridge
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 265.95
Each (ex VAT)
AED 279.25
Each (inc. VAT)
1
AED 265.95
Each (ex VAT)
AED 279.25
Each (inc. VAT)
1
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
72 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
E 2
Configuration
Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
12
Transistor Configuration
Full Bridge
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.