Technical Document
Specifications
Brand
LittelfuseMaximum Continuous Collector Current
460 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Package Type
62MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
108 x 62 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
IGBT Modules, Littelfuse
Ultra low loss
High ruggedness
High short circuit capability
Positive temperature coefficient
Applications in Motor drives, Inverter, DC/DC Converter, SMPS and UPS
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 475.40
Each (ex VAT)
AED 499.17
Each (inc. VAT)
Standard
1
AED 475.40
Each (ex VAT)
AED 499.17
Each (inc. VAT)
Standard
1
Technical Document
Specifications
Brand
LittelfuseMaximum Continuous Collector Current
460 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Package Type
62MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
108 x 62 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
IGBT Modules, Littelfuse
Ultra low loss
High ruggedness
High short circuit capability
Positive temperature coefficient
Applications in Motor drives, Inverter, DC/DC Converter, SMPS and UPS
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.