N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH

RS Stock No.: 871-4915Brand: MagnaChipManufacturers Part No.: MDF11N60BTH
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

660 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.93mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

38.4 nC @ 10 V

Number of Elements per Chip

1

Height

16.13mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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AED 4.10

Each (In a Tube of 10) (ex VAT)

AED 4.305

Each (In a Tube of 10) (inc VAT)

N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH
Select packaging type

AED 4.10

Each (In a Tube of 10) (ex VAT)

AED 4.305

Each (In a Tube of 10) (inc VAT)

N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Tube
10 - 40AED 4.10AED 41.00
50 - 90AED 3.75AED 37.50
100 - 240AED 3.55AED 35.50
250 - 490AED 3.35AED 33.50
500+AED 3.10AED 31.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

660 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.93mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

38.4 nC @ 10 V

Number of Elements per Chip

1

Height

16.13mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more