N-Channel MOSFET, 153 A, 100 V, 3-Pin TO-220 MagnaChip MDP1921TH
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.51mm
Country of Origin
Korea, Republic Of
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
AED 7.10
Each (In a Tube of 10) (ex VAT)
AED 7.455
Each (In a Tube of 10) (inc VAT)
10
AED 7.10
Each (In a Tube of 10) (ex VAT)
AED 7.455
Each (In a Tube of 10) (inc VAT)
10
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 40 | AED 7.10 | AED 71.00 |
| 50 - 90 | AED 6.40 | AED 64.00 |
| 100 - 290 | AED 5.80 | AED 58.00 |
| 300 - 490 | AED 5.70 | AED 57.00 |
| 500+ | AED 5.65 | AED 56.50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.51mm
Country of Origin
Korea, Republic Of
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products