Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
5.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
3.9mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.5mm
Country of Origin
China
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Stock information temporarily unavailable.
Please check again later.
AED 1.45
Each (Supplied on a Reel) (ex VAT)
AED 1.522
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
AED 1.45
Each (Supplied on a Reel) (ex VAT)
AED 1.522
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
5.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
3.9mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.5mm
Country of Origin
China
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.