Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.71mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
4.93mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Height
16.13mm
Product details
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip
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AED 8.75
Each (In a Tube of 5) (ex VAT)
AED 9.188
Each (In a Tube of 5) (inc VAT)
Standard
5
AED 8.75
Each (In a Tube of 5) (ex VAT)
AED 9.188
Each (In a Tube of 5) (inc VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
5 - 20 | AED 8.75 | AED 43.75 |
25 - 45 | AED 7.35 | AED 36.75 |
50 - 145 | AED 6.40 | AED 32.00 |
150 - 245 | AED 6.00 | AED 30.00 |
250+ | AED 5.65 | AED 28.25 |
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.71mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
4.93mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Height
16.13mm
Product details
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance