N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G

RS Stock No.: 829-3360PBrand: MicrochipManufacturers Part No.: DN3765K4-G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.2mm

Transistor Material

Si

Width

6.73mm

Minimum Operating Temperature

-55 °C

Height

2.39mm

Product details

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip

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AED 8.00

Each (Supplied on a Reel) (ex VAT)

AED 8.40

Each (Supplied on a Reel) (inc VAT)

N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G
Select packaging type

AED 8.00

Each (Supplied on a Reel) (ex VAT)

AED 8.40

Each (Supplied on a Reel) (inc VAT)

N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.2mm

Transistor Material

Si

Width

6.73mm

Minimum Operating Temperature

-55 °C

Height

2.39mm

Product details

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip