N-Channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA Microchip LND150N8-G

RS Stock No.: 178-5275Brand: MicrochipManufacturers Part No.: LND150N8-G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

30 mA

Maximum Drain Source Voltage

500 V

Package Type

TO-243AA

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1 kΩ

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.6mm

Height

1.6mm

Minimum Operating Temperature

-55 °C

Product details

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip

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AED 2.75

Each (On a Reel of 2000) (ex VAT)

AED 2.888

Each (On a Reel of 2000) (inc VAT)

N-Channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA Microchip LND150N8-G

AED 2.75

Each (On a Reel of 2000) (ex VAT)

AED 2.888

Each (On a Reel of 2000) (inc VAT)

N-Channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA Microchip LND150N8-G
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

30 mA

Maximum Drain Source Voltage

500 V

Package Type

TO-243AA

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1 kΩ

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.6mm

Height

1.6mm

Minimum Operating Temperature

-55 °C

Product details

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip