Technical Documents
Specifications
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Minimum Operating Temperature
-40°C
Maximum Power Dissipation Pd
1013W
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.
Stock information temporarily unavailable.
AED 2,647.18
AED 2,647.18 Each (ex VAT)
AED 2,779.54
AED 2,779.54 Each (inc. VAT)
1
AED 2,647.18
AED 2,647.18 Each (ex VAT)
AED 2,779.54
AED 2,779.54 Each (inc. VAT)
Stock information temporarily unavailable.
1
Technical Documents
Specifications
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Minimum Operating Temperature
-40°C
Maximum Power Dissipation Pd
1013W
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.