Technical Documents
Specifications
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power module designed for high-performance applications, delivering dual common source functionality with exceptional reliability under challenging conditions. This device effectively manages high voltage and current requirements.
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Stock information temporarily unavailable.
AED 4,210.24
AED 4,210.24 Each (ex VAT)
AED 4,420.75
AED 4,420.75 Each (inc. VAT)
1
AED 4,210.24
AED 4,210.24 Each (ex VAT)
AED 4,420.75
AED 4,420.75 Each (inc. VAT)
Stock information temporarily unavailable.
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power module designed for high-performance applications, delivering dual common source functionality with exceptional reliability under challenging conditions. This device effectively manages high voltage and current requirements.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
