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Nexperia N-Channel MOSFET, 350 mA, 30 V, 3-Pin SOT-323 NX3008NBKW,115

RS Stock No.: 136-4889Brand: NexperiaManufacturers Part No.: NX3008NBKW,115
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

30 V

Series

NX3008NBKW

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

AED 72.10

AED 0.721 Each (In a Pack of 100) (ex VAT)

AED 75.70

AED 0.757 Each (In a Pack of 100) (inc. VAT)

Nexperia N-Channel MOSFET, 350 mA, 30 V, 3-Pin SOT-323 NX3008NBKW,115
Select packaging type

AED 72.10

AED 0.721 Each (In a Pack of 100) (ex VAT)

AED 75.70

AED 0.757 Each (In a Pack of 100) (inc. VAT)

Nexperia N-Channel MOSFET, 350 mA, 30 V, 3-Pin SOT-323 NX3008NBKW,115
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
100 - 500AED 0.721AED 72.10
600 - 1400AED 0.566AED 56.65
1500+AED 0.464AED 46.35

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

30 V

Series

NX3008NBKW

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more