Nexperia PBSS3515VS,115 Dual PNP Transistor, -500 mA, -15 V, 6-Pin SSMini
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-15 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
280 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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AED 16.28
AED 1.628 Each (In a Pack of 10) (ex VAT)
AED 17.09
AED 1.709 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 16.28
AED 1.628 Each (In a Pack of 10) (ex VAT)
AED 17.09
AED 1.709 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | AED 1.628 | AED 16.28 |
| 100 - 190 | AED 0.84 | AED 8.40 |
| 200+ | AED 0.735 | AED 7.35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-15 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
280 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products