Nexperia PBSS4041NZ,115 NPN Transistor, 7 A, 60 V, 3 + Tab-Pin SOT-223
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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AED 55.65
AED 2.782 Each (In a Pack of 20) (ex VAT)
AED 58.43
AED 2.921 Each (In a Pack of 20) (inc. VAT)
Standard
20
AED 55.65
AED 2.782 Each (In a Pack of 20) (ex VAT)
AED 58.43
AED 2.921 Each (In a Pack of 20) (inc. VAT)
Standard
20
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 20 | AED 2.782 | AED 55.65 |
| 40 - 80 | AED 2.52 | AED 50.40 |
| 100 - 180 | AED 1.732 | AED 34.65 |
| 200 - 380 | AED 1.732 | AED 34.65 |
| 400+ | AED 1.68 | AED 33.60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products