Nexperia PBSS4041PX,115 PNP Transistor, -5 A, -60 V, 3-Pin SOT-89
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-60 V
Package Type
SOT-89
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.6 x 2.6 x 1.6mm
Maximum Operating Temperature
+150 °C
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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AED 33.08
AED 3.308 Each (In a Pack of 10) (ex VAT)
AED 34.73
AED 3.473 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 33.08
AED 3.308 Each (In a Pack of 10) (ex VAT)
AED 34.73
AED 3.473 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | AED 3.308 | AED 33.08 |
| 50 - 90 | AED 3.15 | AED 31.50 |
| 100+ | AED 2.678 | AED 26.78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-60 V
Package Type
SOT-89
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.6 x 2.6 x 1.6mm
Maximum Operating Temperature
+150 °C
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products