Nexperia PBSS4350T,215 NPN Transistor, 2 A, 50 V, 3-Pin SOT-23
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.2 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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AED 1,260.00
AED 0.42 Each (On a Reel of 3000) (ex VAT)
AED 1,323.00
AED 0.441 Each (On a Reel of 3000) (inc. VAT)
3000
AED 1,260.00
AED 0.42 Each (On a Reel of 3000) (ex VAT)
AED 1,323.00
AED 0.441 Each (On a Reel of 3000) (inc. VAT)
3000
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Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.2 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products