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Nexperia PBSS4520X,135 NPN Transistor, 5 A, 20 V, 4-Pin UPAK

RS Stock No.: 103-7566Brand: NexperiaManufacturers Part No.: PBSS4520X,135
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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

5 A

Maximum Collector Emitter Voltage

20 V

Package Type

UPAK

Mounting Type

Surface Mount

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

125 MHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

1.6 x 4.6 x 2.6mm

Country of Origin

Hong Kong

Product details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89
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Each (On a Reel of 4000) (ex VAT)

Nexperia PBSS4520X,135 NPN Transistor, 5 A, 20 V, 4-Pin UPAK

P.O.A.

Each (On a Reel of 4000) (ex VAT)

Nexperia PBSS4520X,135 NPN Transistor, 5 A, 20 V, 4-Pin UPAK
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89
AED 0.216Each (On a Reel of 1000) (ex VAT)

Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

5 A

Maximum Collector Emitter Voltage

20 V

Package Type

UPAK

Mounting Type

Surface Mount

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

125 MHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

1.6 x 4.6 x 2.6mm

Country of Origin

Hong Kong

Product details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89
AED 0.216Each (On a Reel of 1000) (ex VAT)