Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.45mm
Country of Origin
Thailand
Product details
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
AED 8.14
AED 1.628 Each (In a Pack of 5) (ex VAT)
AED 8.55
AED 1.709 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 8.14
AED 1.628 Each (In a Pack of 5) (ex VAT)
AED 8.55
AED 1.709 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 1.628 | AED 8.14 |
| 50 - 95 | AED 1.365 | AED 6.82 |
| 100 - 195 | AED 0.998 | AED 4.99 |
| 200 - 245 | AED 0.998 | AED 4.99 |
| 250+ | AED 0.998 | AED 4.99 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.45mm
Country of Origin
Thailand
Product details


