Hex N-Channel MOSFET, 590 mA, 30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMDXB550UNEZ

RS Stock No.: 153-0700Brand: NexperiaManufacturers Part No.: PMDXB550UNEZ
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

590 mA

Maximum Drain Source Voltage

30 V

Package Type

DFN1010B-6, SOT1216

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

4030 mW

Maximum Gate Source Voltage

8 V

Width

1.05mm

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Height

0.36mm

Minimum Operating Temperature

-55 °C

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AED 0.40

Each (On a Reel of 5000) (ex VAT)

AED 0.42

Each (On a Reel of 5000) (inc VAT)

Hex N-Channel MOSFET, 590 mA, 30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMDXB550UNEZ

AED 0.40

Each (On a Reel of 5000) (ex VAT)

AED 0.42

Each (On a Reel of 5000) (inc VAT)

Hex N-Channel MOSFET, 590 mA, 30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMDXB550UNEZ
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

590 mA

Maximum Drain Source Voltage

30 V

Package Type

DFN1010B-6, SOT1216

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

4030 mW

Maximum Gate Source Voltage

8 V

Width

1.05mm

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Height

0.36mm

Minimum Operating Temperature

-55 °C