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Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115

RS Stock No.: 798-2937Brand: NexperiaManufacturers Part No.: PSMN2R6-40YS,115
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

131 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 40V to 55V

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

AED 38.11

AED 7.622 Each (In a Pack of 5) (ex VAT)

AED 40.02

AED 8.003 Each (In a Pack of 5) (inc. VAT)

Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115
Select packaging type

AED 38.11

AED 7.622 Each (In a Pack of 5) (ex VAT)

AED 40.02

AED 8.003 Each (In a Pack of 5) (inc. VAT)

Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 10AED 7.622AED 38.11
15 - 70AED 6.798AED 33.99
75 - 370AED 5.974AED 29.87
375 - 745AED 5.15AED 25.75
750+AED 4.326AED 21.63

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

131 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 40V to 55V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more