Technical Document
Specifications
Brand
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Country of Origin
China
Product details
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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AED 2.45
Each (In a Pack of 5) (ex VAT)
AED 2.572
Each (In a Pack of 5) (inc VAT)
5
AED 2.45
Each (In a Pack of 5) (ex VAT)
AED 2.572
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | AED 2.45 | AED 12.25 |
50 - 95 | AED 2.30 | AED 11.50 |
100 - 245 | AED 2.20 | AED 11.00 |
250 - 495 | AED 2.05 | AED 10.25 |
500+ | AED 2.00 | AED 10.00 |
Technical Document
Specifications
Brand
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Country of Origin
China
Product details
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.