Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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AED 0.20
Each (On a Reel of 3000) (ex VAT)
AED 0.21
Each (On a Reel of 3000) (inc VAT)
3000
AED 0.20
Each (On a Reel of 3000) (ex VAT)
AED 0.21
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 6000 | AED 0.20 | AED 600.00 |
9000+ | AED 0.10 | AED 300.00 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details