N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 onsemi FCH125N65S3R0-F155

RS Stock No.: 178-4239Brand: onsemiManufacturers Part No.: FCH125N65S3R0-F155
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

181 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 16.10

Each (In a Tube of 30) (ex VAT)

AED 16.905

Each (In a Tube of 30) (inc VAT)

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 onsemi FCH125N65S3R0-F155

AED 16.10

Each (In a Tube of 30) (ex VAT)

AED 16.905

Each (In a Tube of 30) (inc VAT)

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 onsemi FCH125N65S3R0-F155
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

181 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China