N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0

RS Stock No.: 178-4246Brand: onsemiManufacturers Part No.: FCU360N65S3R0
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

6.8mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

6.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 2.90

Each (In a Tube of 75) (ex VAT)

AED 3.045

Each (In a Tube of 75) (inc VAT)

N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0

AED 2.90

Each (In a Tube of 75) (ex VAT)

AED 3.045

Each (In a Tube of 75) (inc VAT)

N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

6.8mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

6.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

China