N-Channel MOSFET, 48 A, 80 V, 8-Pin PQFN8 onsemi FDMS3572

RS Stock No.: 917-5469PBrand: onsemiManufacturers Part No.: FDMS3572
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

80 V

Series

UltraFET

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.75mm

Product details

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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AED 11.15

Each (Supplied on a Reel) (ex VAT)

AED 11.708

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 48 A, 80 V, 8-Pin PQFN8 onsemi FDMS3572
Select packaging type

AED 11.15

Each (Supplied on a Reel) (ex VAT)

AED 11.708

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 48 A, 80 V, 8-Pin PQFN8 onsemi FDMS3572
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
5 - 5AED 11.15AED 55.75
10 - 95AED 9.45AED 47.25
100 - 245AED 7.35AED 36.75
250 - 495AED 7.15AED 35.75
500+AED 6.25AED 31.25

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

80 V

Series

UltraFET

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.75mm

Product details

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more