Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.25 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
147 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Series
UniFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
China
Product details
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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AED 6.25
Each (Supplied in a Tube) (ex VAT)
AED 6.562
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
AED 6.25
Each (Supplied in a Tube) (ex VAT)
AED 6.562
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
5 - 20 | AED 6.25 | AED 31.25 |
25 - 45 | AED 5.25 | AED 26.25 |
50 - 245 | AED 4.60 | AED 23.00 |
250 - 495 | AED 4.05 | AED 20.25 |
500+ | AED 3.65 | AED 18.25 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.25 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
147 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Series
UniFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
China
Product details
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.