onsemi FGPF10N60UNDF IGBT, 20 A 600 V, 3-Pin TO-220F, Through Hole

RS Stock No.: 145-4675Brand: ON SemiconductorManufacturers Part No.: FGPF10N60UNDF
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Technical Document

Specifications

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

42 W

Package Type

TO-220F

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.9 x 16.07mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 1.50

Each (In a Tube of 50) (ex VAT)

AED 1.575

Each (In a Tube of 50) (inc VAT)

onsemi FGPF10N60UNDF IGBT, 20 A 600 V, 3-Pin TO-220F, Through Hole

AED 1.50

Each (In a Tube of 50) (ex VAT)

AED 1.575

Each (In a Tube of 50) (inc VAT)

onsemi FGPF10N60UNDF IGBT, 20 A 600 V, 3-Pin TO-220F, Through Hole
Stock information temporarily unavailable.

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Technical Document

Specifications

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

42 W

Package Type

TO-220F

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.9 x 16.07mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.