Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
55 V
Series
UltraFET
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
325 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.82mm
Maximum Operating Temperature
+175 °C
Length
15.87mm
Transistor Material
Si
Typical Gate Charge @ Vgs
220 nC @ 20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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AED 9.00
Each (Supplied in a Tube) (ex VAT)
AED 9.45
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
2
AED 9.00
Each (Supplied in a Tube) (ex VAT)
AED 9.45
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
2
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
55 V
Series
UltraFET
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
325 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.82mm
Maximum Operating Temperature
+175 °C
Length
15.87mm
Transistor Material
Si
Typical Gate Charge @ Vgs
220 nC @ 20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.