onsemi J113 N-Channel JFET, Idss min. 2mA, 3-Pin TO-92

RS Stock No.: 145-5347Brand: onsemiManufacturers Part No.: J113
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 2mA

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Through Hole

Package Type

TO-92

Pin Count

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Dimensions

5.2 x 4.19 x 5.33mm

Height

5.33mm

Width

4.19mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

5.2mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Stock information temporarily unavailable.

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AED 0.70

Each (In a Bag of 1000) (ex VAT)

AED 0.735

Each (In a Bag of 1000) (inc VAT)

onsemi J113 N-Channel JFET, Idss min. 2mA, 3-Pin TO-92

AED 0.70

Each (In a Bag of 1000) (ex VAT)

AED 0.735

Each (In a Bag of 1000) (inc VAT)

onsemi J113 N-Channel JFET, Idss min. 2mA, 3-Pin TO-92
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Bag
1000 - 1000AED 0.70AED 700.00
2000+AED 0.65AED 650.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 2mA

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Through Hole

Package Type

TO-92

Pin Count

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Dimensions

5.2 x 4.19 x 5.33mm

Height

5.33mm

Width

4.19mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

5.2mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.