SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A

RS Stock No.: 205-2501Brand: onsemiManufacturers Part No.: NTHL080N120SC1A
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

SiC

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AED 33.00

Each (In a Tube of 450) (ex VAT)

AED 34.65

Each (In a Tube of 450) (inc VAT)

SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A

AED 33.00

Each (In a Tube of 450) (ex VAT)

AED 34.65

Each (In a Tube of 450) (inc VAT)

SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more