N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G

RS Stock No.: 172-8986Brand: onsemiManufacturers Part No.: NTMFS6H801NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

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AED 9.65

Each (In a Pack of 5) (ex VAT)

AED 10.132

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G
Select packaging type

AED 9.65

Each (In a Pack of 5) (ex VAT)

AED 10.132

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 5AED 9.65AED 48.25
10 - 95AED 8.10AED 40.50
100 - 245AED 6.40AED 32.00
250 - 495AED 6.15AED 30.75
500+AED 5.40AED 27.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm